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Characterization of traps by deep level transient spectroscopy in GaAs epitaxial layers grown by close-spaced vapor transport

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Characterization of traps by deep level transient spectroscopy in GaAs epitaxial layers grown by close-spaced vapor transport

Bourassa, Sylvain (1990) Characterization of traps by deep level transient spectroscopy in GaAs epitaxial layers grown by close-spaced vapor transport. Masters thesis, Concordia University.

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Divisions:Concordia University > Faculty of Engineering and Computer Science > Electrical and Computer Engineering
Item Type:Thesis (Masters)
Authors:Bourassa, Sylvain
Pagination:xiii, 176 leaves : ill. ; 29 cm.
Institution:Concordia University
Degree Name:Theses (M.Eng.)
Program:Electrical and Computer Engineering
Date:1990
Thesis Supervisor(s):Lombos, B. A
ID Code:5861
Deposited By:Concordia University Libraries
Deposited On:03 Sep 2009 09:46
Last Modified:08 Dec 2010 10:47
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