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Modeling and electronic characterizations of carbon nanotube field effect transistors

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Modeling and electronic characterizations of carbon nanotube field effect transistors

Etezadbrojerdi, Maryam (2006) Modeling and electronic characterizations of carbon nanotube field effect transistors. Masters thesis, Concordia University.

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Abstract

The goal of the present work is to explore the concept of nanotechnology, carbon nanotubes and its function in Carbon Nanotube Field Effect Transistor (CNFET) and develop an analytical theory for nanometer-size field-effect transistor. This thesis research models and characterizes the future opportunities of CNFETs within digital designs. The energy band of CNFETs has been modeled at equilibrium. For equilibrium condition, the carrier concentration is found by allowing the local electrostatic potential to rigidly shift the carbon nanotube density of states. The effect of contacts characteristics leading to the potential spikes in the tube at the source and drain of height determined by both work functions of source and drain and V gs have been explored. By approximating the potential barrier shape and using Landauer-Büttiker expression it can be seen that CNFET have noteworthy IV characteristics. The current characteristics are similar to MOSFETs, having the operation being controlled by the electric field from the gate and source/drain voltage which can lead to strong band bending allowing carriers to tunnel through the interface barrier

Divisions:Concordia University > Faculty of Engineering and Computer Science > Electrical and Computer Engineering
Item Type:Thesis (Masters)
Authors:Etezadbrojerdi, Maryam
Pagination:ix, 100 leaves : ill. ; 29 cm.
Institution:Concordia University
Degree Name:M.A. Sc.
Program:Electrical and Computer Engineering
Date:2006
Thesis Supervisor(s):Kahrizi, Mojtaba
ID Code:8977
Deposited By:Concordia University Libraries
Deposited On:18 Aug 2011 14:41
Last Modified:18 Aug 2011 15:00
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