Breadcrumb

 
 

Analytical modelling of drain-current characteristics of AlGaN/GaN HFETs with full incorporation of steady-state velocity overshoot

Title:

Analytical modelling of drain-current characteristics of AlGaN/GaN HFETs with full incorporation of steady-state velocity overshoot

Loghmany, Alireza and Valizadeh, Pouya (2011) Analytical modelling of drain-current characteristics of AlGaN/GaN HFETs with full incorporation of steady-state velocity overshoot. Journal of Physics D: Applied Physics, 44 (12). p. 125102. ISSN 0022-3727

[img]
Preview
PDF - Published Version
813Kb

Official URL: http://dx.doi.org/10.1088/0022-3727/44/12/125102

Abstract

An analytical model for drain-current characteristics of AlGaN/GaN heterostructure field-effect transistors (HFETs), with incorporation of steady-state velocity overshoot and the inflection points in the electronic drift-transport characteristics, is presented. Manifestations of these transport characteristics are usually neglected in modelling the drain current of III–V HFETs. However, significance of these features in AlGaN/GaN material system, compared with other III–V technologies, requires re-evaluation of this policy. Although, for the current state of the art these features are partially masked by the parasitic features such as the drain and source contact resistance, through further improvement in the device fabrication technology they will deserve further attention. The wide peak and pronounced inflection points in the transport characteristics of AlGaN/GaN heterojunctions are modelled through considering a drift-diffusion channel rather than a drift-only transport channel. Simulation results are compared with a non-diffusion type channel that has been so far assumed in modelling the drain current of these devices. Results of the presented model indicate the role of drift-velocity overshoot in further increasing the maximum drain current of AlGaN/GaN HFETs, as the contact resistance is reduced. Comparisons with the experimental measurements are also provided.

Divisions:Concordia University > Faculty of Engineering and Computer Science > Electrical and Computer Engineering
Item Type:Article
Refereed:Yes
Authors:Loghmany, Alireza and Valizadeh, Pouya
Journal or Publication:Journal of Physics D: Applied Physics
Date:2011
ID Code:973678
Deposited By:ANDREA MURRAY
Deposited On:19 Mar 2012 16:57
Last Modified:19 Mar 2012 16:57
All items in Spectrum are protected by copyright, with all rights reserved. The use of items is governed by Spectrum's terms of access.

Repository Staff Only: item control page

Document Downloads

More statistics for this item...

Concordia University - Footer