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Design of high speed InGaAs/InP one-sided junction photodiodes with low junction capacitance

Title:

Design of high speed InGaAs/InP one-sided junction photodiodes with low junction capacitance

Xu, Jie, Zhang, Xiupu and Kishk, Ahmed A. (2019) Design of high speed InGaAs/InP one-sided junction photodiodes with low junction capacitance. Optics Communications . ISSN 00304018 (In Press)

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Official URL: http://dx.doi.org/10.1016/j.optcom.2018.12.085

Abstract

A high speed InGaAs/InP one-sided junction photodiode (OSJ-PD) with low junction capacitance is presented and investigated for the first time. Compared with the well known uni-traveling carrier photodiode (UTC-PD), the OSJ-PD has the advantages of simpler epitaxial layer structure and lower junction capacitance, while maintaining the characteristics of high speed and high output power. The OSJ-PD is studied by simulation. The performance characteristics of OSJ-PD including internal electric field distribution, energy band diagram, frequency response, photocurrent and junction capacitance, are carefully studied.

Divisions:Concordia University > Gina Cody School of Engineering and Computer Science > Electrical and Computer Engineering
Item Type:Article
Refereed:Yes
Authors:Xu, Jie and Zhang, Xiupu and Kishk, Ahmed A.
Journal or Publication:Optics Communications
Date:1 January 2019
Funders:
  • Fonds de recherche du Québec – Nature et technologies (FRQNT)
Digital Object Identifier (DOI):10.1016/j.optcom.2018.12.085
Keywords:InGaAs; InP; Photodetector; One-sided junction photodiode; Uni-traveling carrier photodiode
ID Code:984845
Deposited By: MICHAEL BIRON
Deposited On:10 Jan 2019 14:31
Last Modified:10 Jan 2019 14:31

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