Login | Register

Design of high speed InGaAs/InP one-sided junction photodiodes with low junction capacitance


Design of high speed InGaAs/InP one-sided junction photodiodes with low junction capacitance

Xu, Jie, Zhang, Xiupu and Kishk, Ahmed A. ORCID: https://orcid.org/0000-0001-9265-7269 (2019) Design of high speed InGaAs/InP one-sided junction photodiodes with low junction capacitance. Optics Communications . ISSN 00304018 (In Press)

[thumbnail of Design-of-high-speed-InGaAs-InP-one-sided-junction-photod_2019_Optics-Commun.pdf]
Text (application/pdf)
Design-of-high-speed-InGaAs-InP-one-sided-junction-photod_2019_Optics-Commun.pdf - Accepted Version
Available under License Spectrum Terms of Access.

Official URL: http://dx.doi.org/10.1016/j.optcom.2018.12.085


A high speed InGaAs/InP one-sided junction photodiode (OSJ-PD) with low junction capacitance is presented and investigated for the first time. Compared with the well known uni-traveling carrier photodiode (UTC-PD), the OSJ-PD has the advantages of simpler epitaxial layer structure and lower junction capacitance, while maintaining the characteristics of high speed and high output power. The OSJ-PD is studied by simulation. The performance characteristics of OSJ-PD including internal electric field distribution, energy band diagram, frequency response, photocurrent and junction capacitance, are carefully studied.

Divisions:Concordia University > Gina Cody School of Engineering and Computer Science > Electrical and Computer Engineering
Item Type:Article
Authors:Xu, Jie and Zhang, Xiupu and Kishk, Ahmed A.
Journal or Publication:Optics Communications
Date:1 January 2019
  • Fonds de recherche du Québec – Nature et technologies (FRQNT)
Digital Object Identifier (DOI):10.1016/j.optcom.2018.12.085
Keywords:InGaAs; InP; Photodetector; One-sided junction photodiode; Uni-traveling carrier photodiode
ID Code:984845
Deposited By: Michael Biron
Deposited On:10 Jan 2019 14:31
Last Modified:27 Dec 2020 02:00


Fukuchi K., Kasamatsu T., Morie M., Ohhira R., Ito T., Sekiya K., Ogasahara D., Ono T.1092-Tb/s (273 x 40-Gb/s) triple-band/ultra-dense WDM optical-repeatered transmission experiment Optical Fiber Communication Conference and International Conference on Quantum Information (2001), Paper PD24, Optical Society of America (2001), p. PD24

Shi J.-W., Huang C.-B., Pan C.-L.Millimeter-wave photonic wireless links for very high data rate communication NPG Asia Mater., 3 (2011), pp. 41-48

Koenig S., LopezDiaz D., Antes J., Boes F., Henneberger R., Leuther A., Tessmann A., Schmogrow R., Hillerkuss D., Palmer R., Zwick T., Koos C., Freude W., Ambacher O., Leuthold J., Kallfass I.Wireless sub-THz communication system with high data rate Nat. Photonics, 7 (2013), pp. 977-981

Song H.J., Nagatsuma T.Present and Future of Terahertz Communications IEEE Trans. Terahertz Sci. Technol., 1 (2011), pp. 256-263

Seeds A.J., Williams K.J.Microwave Photonics J. Lightwave Technol., 24 (2006), pp. 4628-4641

Chattopadhyay G.Technology, capabilities, and performance of low power terahertz sources IEEE Trans. Terahertz Sci. Technol., 1 (2011), pp. 33-53

Ito H., Kodama S., Muramoto Y., Furuta T., Nagatsuma T., Ishibashi T.High-speed and high-output InP-InGaAs unitraveling-carrier photodiodes IEEE J. Sel. Top. Quantum Electron., 10 (2004), pp. 709-727

Ito H., Furuta T., Hirota Y., Ishibashi T., Hirata A., Nagatsuma T., Matsuo H., Noguchi T., Ishiguro M.Photonic millimetre-wave emission at 300 GHz using an antenna-integrated uni-travelling-carrier photodiode Electron. Lett., 38 (2002), pp. 989-990

Tucker R.S., Taylor A.J., Burrus C.A., Eisenstein G., Wiesenfeld J.M.Coaxially mounted 67 GHz bandwidth InGaAs PIN photodiodeElectron. Lett., 22 (1986), pp. 917-918

Parker D.G., theory The.The theory fabrication and assessment of ultra high speed photodiodes GEC J. Res., 6 (1988), pp. 106-117

Kato K., Hata S., Kawano K., Kozen A.Design of ultrawide-band, high-sensitivity p−i−n protodetectors IEICE Trans. Electron., E76–C (1993), pp. 214-221

Lee T.-P., Burrus C., Dentai A.InGaAs/InP p−i−n photodiodes for lightwave communications at the 095-165μm wavelength IEEE J. Quantum Electron., 17 (1981), pp. 232-238

Li K., Rezek E., Law H.D.InGaAs pin photodiode fabricated on semi-insulating InP substrate for monolithic integration Electron. Lett., 20 (1984), pp. 196-198

Makiuchi M., Norimatsu M., Sakurai C., Kondo K., Yamamoto N., Yano M.Flip-chip planar GaInAs/InP p−i−n photodiodes-fabrication and characteristics J. Lightwave Technol., 13 (1995), pp. 2270-2275

Ishibashi T., Shimizu N., Kodama S., Ito H., Nagatsuma T., Furuta T.Uni-travelling-carrier photodiodes Tech. Dig. Ultrafast Electron. Optoelectron, paper UC3 (1997), pp. 166-168

Li Z., Pan H., Chen H., Beling A., Campbell J.C.High-Saturation-Current Modified Uni-Traveling-Carrier Photodiode With Cliff Layer IEEE J. Quantum Electron., 46 (2010), pp. 626-632

Shi J.W., Kuo F.M., Chou M.Z.A linear cascade near-ballistic uni-traveling-carrier photodiodes with extremely high saturation-current bandwidth product (6825mA-GHz, 75mA/91 GHz) under a 50Ω load Opt. Fiber Commun. (2010), pp. 1-3

Wu Y.S., Shi J.W.Dynamic analysis of high-power and high-speed near-ballistic unitraveling carrier photodiodes at W-band IEEE Photonics Technol. Lett., 20 (2008), pp. 1160-1162

Shi J.W., Kuo F.M., Wu C.J., Chang C.L., Liu C.Y., Chen C.Y., Chyi J.I.Extremely high saturation current-bandwidth product performance of a near-ballistic uni-traveling-carrier photodiode with a flip-chip bonding structure IEEE J. Quantum Electron., 46 (2010), pp. 80-86

Shimizu N., Watanabe N., Furuta T., Ishibashi T.InP-InGaAs uni-traveling-carrier photodiode with improved 3-dB bandwidth of over 150 GHz IEEE Photonics Technol. Lett., 10 (1998), pp. 412-414

Wun J.M., Lai C.H., Chen N.W., Bowers J.E., Shi J.W.Flip-chip bonding packaged THz photodiode with broadband high-power performance IEEE Photonics Technol. Lett., 26 (2014), pp. 2462-2464

Ito H., Furuta T., Kodama S., Ishibashi T.InP/InGaAs uni-travelling-carrier photodiode with 310 GHz bandwidth Electron. Lett., 36 (2000), pp. 1809-1810

Shi J.-W., Pan C.-L., Huang C.-B., Wun J.-M., Liu H.-Y., Zeng Y.-L.High-Power THz-wave generation by using ultra-fast (315 GHz) uni-traveling carrier photodiode with novel collector design and photonic femtosecond pulse generator Optical Fiber Communication Conference (2015), Paper M3C6, Optical Society of America (2015), p. M3C6

Rymanov V., Stöhr A., Dülme S., Tekin T.Triple transit region photodiodes (TTR-PDs) providing high millimeter wave output power Opt. Express, 22 (2014), pp. 7550-7558

A. Davidson, K.L. Dessau, Photodiode-based detector operates at 60 GHz, http://assets.newport.com/webDocuments-EN/images/Photodiode-Based_Detector.PDF, Undated. (Accessed February 2018).

Han S.-P., Ko H., Park J.-W., Kim N., Yoon Y.-J., Shin J.-H., Kim D.Y., Lee D.H., Park K.H.InGaAs Schottky barrier diode array detector for a real-time compact terahertz line scanner Opt. Express, 21 (2013), pp. 25874-25882

Li S.S.Development of a high speed InGaAs/InP Schottky barrier photodetector for millimeter-wave fiber optical links (1987)

Emeis N., Schumacher H., Beneking H.High-speed GaInAs Schottky photodetector Electron. Lett., 21 (1985), pp. 180-181

Kim J.-H., Li S.S., Figueroa L., Carruthers T.F., Wagner R.S.High-speed Ga0.47In0.53As/InP infra-red Schottky-barrier photodiodes Electron. Lett., 24 (1988), pp. 1067-1068

He L., Costello M.J., Cheng K.Y., Wohlert D.E.Enhanced Schottky barrier on InGaAs for high performance photodetector application J. Vac. Sci. Technol. A., 16 (1998), pp. 1646-1649

Lee H.J., Anderson W.A., Hardtdegen H., Lüth H.Barrier height enhancement of Schottky diodes on n-In0.53Ga0.47As by cryogenic processing Appl. Phys. Lett., 63 (1993), pp. 1939-1941

Hwang K.C., Li S.S., Park C., Anderson T.J.Schottky barrier height enhancement of n-In0.53Ga0.47As by a novel chemical passivation technique J. Appl. Phys., 67 (1990), pp. 6571-6573

Soole J.B.D., Schumacher H., LeBlanc H.P., Bhat R., Koza M.A.High-speed performance of OMCVD grown InAlAs/InGaAs MSM photodetectors at 1.5μm and 1.3μm wavelengths
IEEE Photonics Technol. Lett., 1 (1989), pp. 250-252

Soole J.B.D., Schumacher H.InGaAs metal–semiconductor-metal photodetectors for long wavelength optical communications IEEE J. Quantum Electron., 27 (1991), pp. 737-752

Kuhl D., Hieronymi F., Bottcher E.H., Wolf T., Krost A., Bimberg D.Very high-speed metal–semiconductor-metal InGaAs : Fe photodetectors with InP : Fe barrier enhancement layer grown by low pressure metalorganic chemical vapour deposition Electron. Lett., 26 (1990), pp. 2107-2109

Wang R., Xu M., Ye P.D., Huang R.Schottky-barrier height modulation of metal/In0.53Ga0.47As interfaces by insertion of atomic-layer deposited ultrathin Al2O3 J. Vac. Sci. Technol. B., 29 (2011), p. 041206

Kordoš P., Marso M., Meyer R., Lüth H.Schottky barrier height enhancement on n-In0.53Ga0.47As J. Appl. Phys., 72 (1992), pp. 2347-2355

Chen C.Y., Cho A.Y., Cheng K.Y., Garbinski P.A.Quasi-Schottky barrier diode on n-Ga0.47In0.53As using a fully depleted p+-Ga0.47In0.53As layer grown by molecular beam epitaxy Appl. Phys. Lett., 40 (1982), pp. 401-403

Kordos P., Marso M., Meyer R., Luth H.Schottky contacts on n-In0.53Ga0.47As with enhanced barriers by counter-doped interfacial layers IEEE Trans. Electron. Dev., 39 (1992), pp. 1970-1972

Hu C.Modern Semiconductor Devices for Integrated Circuits Prentice Hall (2010)

Srivastava S., Roenker K.P.Numerical modeling study of the InP/InGaAs uni-travelling carrier photodiode Solid-State Electron., 48 (2004), pp. 461-470

Ishibashi T., Furuta T., Fushimi H., Kodama S., Ito H., Nagatsuma T., Shimizu N., Miyamoto Y.InP/InGaAs uni-traveling-carrier photodiodes IEICE Trans. Electron., E83–C (2000), pp. 938-949

Adachi S.Physical Properties of III–V Semiconductor Compounds: InP, InAs, GaAs, GaP, InGaAs and InGaAsP (first ed.), Wiley Interscience, New York (1992)

Parks J.W., Smith A.W., Brennan K.F., Tarof L.E.Theoretical study of device sensitivity and gain saturation of separate absorption, grading, charge, and multiplication InP/InGaAs avalanche photodiodes IEEE Trans. Electron. Dev., 43 (1996), pp. 2113-2121

Datta S., Shi S., Roenker K.P., Cahay M.M., Stanchina W.E.Simulation and design of InAlAs/InGaAs pnp heterojunction bipolar transistors IEEE Trans. Electron. Dev., 45 (1998), pp. 1634-1643

ATLAS Users Manual, Silvaco International, Santa Clara, 2013.

Srivastava S.Simulation study of InP-based uni-traveling carrier photodiode (Master’s thesis) University of Cincinnati (2003)

Balaraman P.A.Design, simulation and modeling of InP/GaAsSb/InP double heterojunction bipolar transistors (Master’s thesis) University of Cincinnati (2003)

Shrestha Y.R.Numerical simulation of GaAsSb/InP uni-traveling carrier photodiods (Master’s thesis) University of Cincinnati (2005)

New semiconductor materials, characteristics and properties, http://www.ioffe.rssi.ru/SVA/NSM/. (Accessed February 2018).

Ahrenkiel R.K., Ellingson R., Johnston S., Wanlass M.Recombination lifetime of In0.53Ga0.47As as a function of doping density Appl. Phys. Lett., 72 (1998), pp. 3470-3472

Xu J., Zhang X., Kishk A.Design of modified InGaAs/InP one-sided junction photodiodes with improved response at high light intensity Appl. Opt. AO, 57 (2018), pp. 9365-9374

Bahl I.J.Lumped Elements for RF and Microwave Circuits Artech House, Boston (2003), pp. 171-172
All items in Spectrum are protected by copyright, with all rights reserved. The use of items is governed by Spectrum's terms of access.

Repository Staff Only: item control page

Downloads per month over past year

Research related to the current document (at the CORE website)
- Research related to the current document (at the CORE website)
Back to top Back to top