McRae, A. C., Tayari, V., Porter, J. M. and Champagne, A. R. (2017) Giant electron-hole transport asymmetry in ultra-short quantum transistors. Nature Communications, 8 . p. 15491. ISSN 2041-1723
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Official URL: http://dx.doi.org/10.1038/ncomms15491
Abstract
Making use of bipolar transport in single-wall carbon nanotube quantum transistors would permit a single device to operate as both a quantum dot and a ballistic conductor or as two quantum dots with different charging energies. Here we report ultra-clean 10 to 100 nm scale suspended nanotube transistors with a large electron-hole transport asymmetry. The devices consist of naked nanotube channels contacted with sections of tube under annealed gold. The annealed gold acts as an n-doping top gate, allowing coherent quantum transport, and can create nanometre-sharp barriers. These tunnel barriers define a single quantum dot whose charging energies to add an electron or a hole are vastly different (e−h charging energy asymmetry). We parameterize the e−h transport asymmetry by the ratio of the hole and electron charging energies ηe−h. This asymmetry is maximized for short channels and small band gap tubes. In a small band gap device, we demonstrate the fabrication of a dual functionality quantum device acting as a quantum dot for holes and a much longer quantum bus for electrons. In a 14 nm-long channel, ηe−h reaches up to 2.6 for a device with a band gap of 270 meV. The charging energies in this device exceed 100 meV.
| Divisions: | Concordia University > Faculty of Arts and Science > Physics |
|---|---|
| Item Type: | Article |
| Refereed: | Yes |
| Authors: | McRae, A. C. and Tayari, V. and Porter, J. M. and Champagne, A. R. |
| Journal or Publication: | Nature Communications |
| Date: | 2017 |
| Funders: |
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| Digital Object Identifier (DOI): | 10.1038/ncomms15491 |
| ID Code: | 982638 |
| Deposited By: | Danielle Dennie |
| Deposited On: | 20 Jun 2017 19:07 |
| Last Modified: | 18 Jan 2018 17:55 |
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