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Characterization of traps by deep level transient spectroscopy in GaAs epitaxial layers grown by close-spaced vapor transport

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Characterization of traps by deep level transient spectroscopy in GaAs epitaxial layers grown by close-spaced vapor transport

Bourassa, Sylvain (1990) Characterization of traps by deep level transient spectroscopy in GaAs epitaxial layers grown by close-spaced vapor transport. Masters thesis, Concordia University.

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Divisions:Concordia University > Gina Cody School of Engineering and Computer Science > Electrical and Computer Engineering
Item Type:Thesis (Masters)
Authors:Bourassa, Sylvain
Pagination:xiii, 176 leaves : ill. ; 29 cm.
Institution:Concordia University
Degree Name:M. Eng.
Program:Electrical and Computer Engineering
Date:1990
Thesis Supervisor(s):Lombos, B. A
Identification Number:TK 7871.89 S35B68 1990
ID Code:5861
Deposited By: Concordia University Library
Deposited On:03 Sep 2009 13:46
Last Modified:21 Oct 2022 14:21
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