Abstract

The main objective of this research project is to develop an applied theoretical model to describe
the quantum transport of a suspended monolayer graphene transistor under the presence of
a magnetic field and unaxial strain. In the literature, we find several theoretical models for studying
monolayer and multilayer graphene under several conditions and considering different physical
properties such as spin. Although those proposed models predict interesting physical phenomena,
such as magnetic confinement of particles, they are unrealistic and often incomplete in terms of experimental
design. Here, we present a sophisticated model using a more applied approach, enabling
future realistic experiments and the extraction of important experimental data regarding physical
phenomena such as quantum magneto transport in strained graphene junctions, bridging theory and
experiment. In order to do so, we develop a set of mathematica codes to calculate conductivity for
monolayer graphene, considering both magnetic field – which contributes to the Hamiltonian as a
vector potential- and the uniaxial mechanical strain ( x direction) – which contributes with strain
induced potentials. Two main new device geometries are introduced in this thesis: a transistor with
a magnetic field applied to its channel and another with both magnetic field and unaxial mechanical
strain. We report that those devices are candidates for quantum electronic components, which
should be of much interest for applications. They have a high on-off ratio and their conductivity is
easily suppressed by the presence of a magnetic field and mechanical strain.