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Abstract

Topological insulators (TI) are a unique class of materials that can support 2-dimensional (2D) metallic states on the surfaces of 3-dimensional insulating crystals. These 2D surface states are predicted to be spin polarized and topological, leading to potential applications in spintronics and quantum computing. While signs of surface transport have recently been observed in magneto transport experiments, many applied and theoretical questions remain to produce robust Bi$_2$Se$_3$ transistors. We first present the fabrication methods we developed to create high quality devices. We address the first main road block the community is facing to explore topological charge transport: making low resistance contacts to TI's. Using our devices, we then explore magneto transport. At cryogenic temperatures we observe the classical Hall effect as well as Shubnikov-de Haas oscillations consistent with the presence of Landau levels and surface transport in Bi2Se3 thin crystals. We focus on a thin crystal made of two regions with two thicknesses. We use our data to address the second major roadblock faced by the TI community: bulk-defect conduction versus surface transport. We discuss the evidence we have to support 2D surface transport in our devices, and the outlook for the exploration of the topological aspects of these surface states.

Available Versions of this Item

• Fabrication and Magnetotransport Studies of Bi2Se3 Topological Insulator Transistors. (deposited 23 Jun 2021 15:45)
  • Fabrication and Magnetotransport Studies of Bi2Se3 Topological Insulator Transistors. (deposited 05 Jul 2016 14:04) [Currently Displayed]